IRFW520A Specs and Replacement
Type Designator: IRFW520A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO263
IRFW520A substitution
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IRFW520A datasheet
irfw520a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Abso... See More ⇒
Detailed specifications: IRFU9212 , IRFU9214 , IRFU9220 , IRFU9222 , IRFU9310 , IRFUC20 , IRFW450 , IRFW510A , IRFB4115 , IRFW530A , IRFW540A , IRFW550A , IRFW610A , IRFW614A , IRFW620A , IRFW624A , IRFW630A .
Keywords - IRFW520A MOSFET specs
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