IRFW520A PDF and Equivalents Search

 

IRFW520A Specs and Replacement

Type Designator: IRFW520A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO263

IRFW520A substitution

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IRFW520A datasheet

 ..1. Size:215K  1
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IRFW520A

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 ..2. Size:503K  samsung
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IRFW520A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Abso... See More ⇒

 9.1. Size:285K  1
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IRFW520A

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 9.2. Size:282K  1
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IRFW520A

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Detailed specifications: IRFU9212 , IRFU9214 , IRFU9220 , IRFU9222 , IRFU9310 , IRFUC20 , IRFW450 , IRFW510A , IRFB4115 , IRFW530A , IRFW540A , IRFW550A , IRFW610A , IRFW614A , IRFW620A , IRFW624A , IRFW630A .

Keywords - IRFW520A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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