All MOSFET. FQB3N40TM Datasheet

 

FQB3N40TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB3N40TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: D2-PAK

 FQB3N40TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB3N40TM Datasheet (PDF)

 ..1. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf

FQB3N40TM FQB3N40TM

April 2000TMQFETQFETQFETQFETFQB3N40 / FQI3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf

FQB3N40TM FQB3N40TM

November 2000TMQFETQFETQFETQFETFQB3N25 / FQI3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technolo

 9.2. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf

FQB3N40TM FQB3N40TM

September 2000TMQFETQFETQFETQFETFQB3N90 / FQI3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced techn

 9.3. Size:718K  fairchild semi
 fqb3n30tm fqi3n30tu.pdf

FQB3N40TM FQB3N40TM

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.4. Size:697K  fairchild semi
 fqb3n90 fqi3n90.pdf

FQB3N40TM FQB3N40TM

September 2000TMQFETQFETQFETQFETFQB3N90 / FQI3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced techn

 9.5. Size:872K  fairchild semi
 fqb3n60ctm.pdf

FQB3N40TM FQB3N40TM

May 2006TMQFETFQB3N60C600V N-Channel MOSFETFeatures Description 3A, 600V, RDS(on) = 3.4 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 10.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially tailored to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SVS70R420SE3TR

 

 
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