All MOSFET. FQB4N25TM Datasheet

 

FQB4N25TM Datasheet and Replacement


   Type Designator: FQB4N25TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: D2-PAK
 

 FQB4N25TM substitution

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FQB4N25TM Datasheet (PDF)

 ..1. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf pdf_icon

FQB4N25TM

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 8.1. Size:517K  fairchild semi
 fqb4n20ltm.pdf pdf_icon

FQB4N25TM

December 2000TMQFETQFETQFETQFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 8.2. Size:704K  fairchild semi
 fqb4n20 fqi4n20.pdf pdf_icon

FQB4N25TM

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 8.3. Size:698K  fairchild semi
 fqb4n20tm fqi4n20tu.pdf pdf_icon

FQB4N25TM

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

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Datasheet: FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM , FQB46N15TMAM002 , FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , IRFB4110 , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM , FQB50N06LTM , FQB50N06TM , FQB55N06TM , FQB55N10TM .

History: RRQ045P03

Keywords - FQB4N25TM MOSFET datasheet

 FQB4N25TM cross reference
 FQB4N25TM equivalent finder
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