FQB50N06LTM Datasheet and Replacement
Type Designator: FQB50N06LTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 121 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 380 nS
Cossⓘ - Output Capacitance: 445 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: D2-PAK
FQB50N06LTM substitution
FQB50N06LTM Datasheet (PDF)
fqb50n06ltm fqi50n06ltu.pdf

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee
fqb50n06l fqi50n06l.pdf

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee
fqb50n06 fqi50n06.pdf

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially
fqb50n06tm fqi50n06tu.pdf

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially
Datasheet: FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM , AON7408 , FQB50N06TM , FQB55N06TM , FQB55N10TM , FQB5N15TM , FQB5N20LTM , FQB5N20TM , FQB5N30TM , FQB5N40TM .
History: IRF7422D2PBF | KF5N60P | IXFN39N90 | H2N60U | VBH40-05B | IXFN44N50U3 | TMP3N50Z
Keywords - FQB50N06LTM MOSFET datasheet
FQB50N06LTM cross reference
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History: IRF7422D2PBF | KF5N60P | IXFN39N90 | H2N60U | VBH40-05B | IXFN44N50U3 | TMP3N50Z



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