FQB55N10TM Specs and Replacement

Type Designator: FQB55N10TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 155 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: D2-PAK

FQB55N10TM substitution

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FQB55N10TM datasheet

 ..1. Size:1039K  fairchild semi
 fqb55n10tm.pdf pdf_icon

FQB55N10TM

October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been especia... See More ⇒

 6.1. Size:1056K  fairchild semi
 fqb55n10 fqi55n10.pdf pdf_icon

FQB55N10TM

October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been especia... See More ⇒

 8.1. Size:602K  fairchild semi
 fqb55n06tm.pdf pdf_icon

FQB55N10TM

May 2001 TM QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒

Detailed specifications: FQB4N25TM, FQB4N50TM, FQB4N90TM, FQB4P25TM, FQB4P40TM, FQB50N06LTM, FQB50N06TM, FQB55N06TM, IRF9540, FQB5N15TM, FQB5N20LTM, FQB5N20TM, FQB5N30TM, FQB5N40TM, FQB5N50CFTM, FQB5N50CTM, FQB5N50TM

Keywords - FQB55N10TM MOSFET specs

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