All MOSFET. FQB55N10TM Datasheet

 

FQB55N10TM Datasheet and Replacement


   Type Designator: FQB55N10TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: D2-PAK
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FQB55N10TM Datasheet (PDF)

 ..1. Size:1039K  fairchild semi
 fqb55n10tm.pdf pdf_icon

FQB55N10TM

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia

 6.1. Size:1056K  fairchild semi
 fqb55n10 fqi55n10.pdf pdf_icon

FQB55N10TM

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia

 8.1. Size:602K  fairchild semi
 fqb55n06tm.pdf pdf_icon

FQB55N10TM

May 2001TMQFETFQB55N06 / FQI55N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AFP2323 | STH310N10F7-6 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - FQB55N10TM MOSFET datasheet

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