FQB5N30TM Datasheet and Replacement
Type Designator: FQB5N30TM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id| ⓘ - Maximum Drain Current: 5.4
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 9.8
nC
tr ⓘ - Rise Time: 55
nS
Cossⓘ -
Output Capacitance: 70
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
D2-PAK
-
MOSFET ⓘ Cross-Reference Search
FQB5N30TM Datasheet (PDF)
..1. Size:765K fairchild semi
fqb5n30tm fqi5n30tu.pdf 
May 2000TMQFETQFETQFETQFETFQB5N30 / FQI5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h
9.1. Size:655K fairchild semi
fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf
TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored
9.2. Size:553K fairchild semi
fqb5n60 fqi5n60.pdf
April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h
9.3. Size:945K fairchild semi
fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf
October 2008QFETFQB5N50C/FQI5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tai
9.4. Size:551K fairchild semi
fqb5n60tm.pdf
April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h
9.5. Size:539K fairchild semi
fqb5n20l fqi5n20l.pdf
December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced
9.6. Size:700K fairchild semi
fqb5n50cf fqb5n50cftm.pdf
May 2006TMFRFETFQB5N50CF500V N-Channel MOSFETFeatures Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC)DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to mini
9.7. Size:700K fairchild semi
fqb5n20tm fqi5n20tu.pdf
April 2000TMQFETQFETQFETQFETFQB5N20 / FQI5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
9.8. Size:760K fairchild semi
fqb5n15tm fqi5n15tu.pdf
May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology h
9.9. Size:1029K fairchild semi
fqb5n90tm.pdf
October 2008QFETFQB5N90 / FQI5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been especiall
9.10. Size:1072K fairchild semi
fqb5n90 fqi5n90.pdf
October 2008QFETFQB5N90 / FQI5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been especiall
9.11. Size:711K fairchild semi
fqb5n40tm fqi5n40tu.pdf
April 2000TMQFETQFETQFETQFETFQB5N40 / FQI5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
9.12. Size:538K fairchild semi
fqb5n20ltm fqi5n20ltu.pdf
December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced
9.13. Size:768K fairchild semi
fqb5n50tm.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology
9.14. Size:578K onsemi
fqb5n60ctm ws.pdf
June 2015FQB5N60CTM_WSN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Features Description 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET isproduced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 15 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF)technology
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFP460
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
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