FQB5N60TM Datasheet and Replacement
Type Designator: FQB5N60TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: D2-PAK
FQB5N60TM substitution
FQB5N60TM Datasheet (PDF)
fqb5n60tm.pdf

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h
fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored
fqb5n60 fqi5n60.pdf

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h
fqb5n60ctm ws.pdf

June 2015FQB5N60CTM_WSN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Features Description 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET isproduced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 15 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF)technology
Datasheet: FQB5N20LTM , FQB5N20TM , FQB5N30TM , FQB5N40TM , FQB5N50CFTM , FQB5N50CTM , FQB5N50TM , FQB5N60CTM , 8205A , FQB5N90TM , FQB5P10TM , FQB5P20TM , FQB630TM , FQB65N06TM , FQB6N15TM , FQB6N25TM , FQB6N40CTM .
History: SIHF520S | FMR19N60ES | BL5N135-F
Keywords - FQB5N60TM MOSFET datasheet
FQB5N60TM cross reference
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History: SIHF520S | FMR19N60ES | BL5N135-F



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