FQB5N60TM Specs and Replacement

Type Designator: FQB5N60TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: D2-PAK

FQB5N60TM substitution

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FQB5N60TM datasheet

 ..1. Size:551K  fairchild semi
 fqb5n60tm.pdf pdf_icon

FQB5N60TM

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology h... See More ⇒

 7.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQB5N60TM

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored ... See More ⇒

 7.2. Size:553K  fairchild semi
 fqb5n60 fqi5n60.pdf pdf_icon

FQB5N60TM

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology h... See More ⇒

 7.3. Size:578K  onsemi
 fqb5n60ctm ws.pdf pdf_icon

FQB5N60TM

June 2015 FQB5N60CTM_WS N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Features Description 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology ... See More ⇒

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Detailed specifications: FQB5N20LTM, FQB5N20TM, FQB5N30TM, FQB5N40TM, FQB5N50CFTM, FQB5N50CTM, FQB5N50TM, FQB5N60CTM, IRFP260, FQB5N90TM, FQB5P10TM, FQB5P20TM, FQB630TM, FQB65N06TM, FQB6N15TM, FQB6N25TM, FQB6N40CTM

Keywords - FQB5N60TM MOSFET specs

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