All MOSFET. FQB7N80TMAM002 Datasheet

 

FQB7N80TMAM002 Datasheet and Replacement


   Type Designator: FQB7N80TMAM002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: D2-PAK
 

 FQB7N80TMAM002 substitution

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FQB7N80TMAM002 Datasheet (PDF)

 5.1. Size:836K  fairchild semi
 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf pdf_icon

FQB7N80TMAM002

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially

 9.1. Size:1031K  fairchild semi
 fqb7n65ctm.pdf pdf_icon

FQB7N80TMAM002

October 2008QFETFQB7N65C650V N-Channel MOSFETFeatures Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fa

 9.2. Size:735K  fairchild semi
 fqb7n30tm.pdf pdf_icon

FQB7N80TMAM002

April 2000TMQFETQFETQFETQFETFQB7N30 / FQI7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has

 9.3. Size:651K  fairchild semi
 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf pdf_icon

FQB7N80TMAM002

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

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Datasheet: FQB6N80TM , FQB6N90TMAM002 , FQB70N10TMAM002 , FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , 4N60 , FQB7P06TM , FQB85N06TMAM002 , FQB8N25TM , FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM .

History: APT1003R5CN | APT1004R2BN

Keywords - FQB7N80TMAM002 MOSFET datasheet

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