FQB7N80TMAM002 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB7N80TMAM002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: D2-PAK
FQB7N80TMAM002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB7N80TMAM002 Datasheet (PDF)
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