FQB9N50CFTM Specs and Replacement

Type Designator: FQB9N50CFTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 173 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: D2-PAK

FQB9N50CFTM substitution

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FQB9N50CFTM datasheet

 ..1. Size:748K  fairchild semi
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FQB9N50CFTM

October 2006 TM FRFET FQB9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28nC) DMOS technology. Low Crss ( typical 24pF) This advanced technology has been especially tailored to ... See More ⇒

 6.1. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQB9N50CFTM

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to ... See More ⇒

 6.2. Size:588K  onsemi
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FQB9N50CFTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:705K  fairchild semi
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FQB9N50CFTM

April 2000 TM QFET QFET QFET QFET FQB9N50 / FQI9N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology... See More ⇒

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Detailed specifications: FQB8N25TM, FQB8N60CFTM, FQB8P10TM, FQB9N08LTM, FQB9N08TM, FQB9N15TM, FQB9N25CTM, FQB9N25TM, IRF520, FQB9N50CTM, FQB9N50TM, FQB9P25TM, FQD10N20CTF, FQD10N20CTM, FQD10N20LTF, FQD10N20LTM, FQD10N20TF

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