All MOSFET. FQD13N06LTM Datasheet

 

FQD13N06LTM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD13N06LTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: D-PAK

 FQD13N06LTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD13N06LTM Datasheet (PDF)

 ..1. Size:733K  fairchild semi
fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf

FQD13N06LTM FQD13N06LTM

January 2009QFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been e

 5.1. Size:1008K  onsemi
fqd13n06l fqu13n06l.pdf

FQD13N06LTM FQD13N06LTM

FQD13N06L / FQU13N06LN-Channel QFET MOSFET60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V,Description ID = 5.5 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 17 pF)planar stripe and DMOS technology. This advanced MOSFET technology has b

 6.1. Size:731K  fairchild semi
fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf

FQD13N06LTM FQD13N06LTM

January 2009QFETFQD13N06 / FQU13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 6.2. Size:944K  onsemi
fqd13n06.pdf

FQD13N06LTM FQD13N06LTM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMNH6011LK3

 

 
Back to Top