FQD16N15TM Specs and Replacement
Type Designator: FQD16N15TM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 11.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: D-PAK
FQD16N15TM substitution
- MOSFET ⓘ Cross-Reference Search
FQD16N15TM datasheet
fqd16n15tm.pdf
April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒
fqd16n15 fqu16n15.pdf
April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒
fqd16n25c.pdf
January 2009 QFET FQD16N25C 250V N-Channel MOSFET Features Description 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 41 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to ... See More ⇒
fqd16n25c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQD12P10TM, FQD13N06LTF, FQD13N06LTM, FQD13N06TF, FQD13N06TM, FQD13N10TF, FQD13N10TM, FQD14N15TM, AO4407A, FQD17N08LTF, FQD17N08LTM, FQD17P06TF, FQD17P06TM, FQD18N20V2TF, FQD18N20V2TM, FQD19N10LTF, FQD19N10LTM
Keywords - FQD16N15TM MOSFET specs
FQD16N15TM cross reference
FQD16N15TM equivalent finder
FQD16N15TM pdf lookup
FQD16N15TM substitution
FQD16N15TM replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: TMD8N65H | IPA65R310CFD | SPU04N60C3 | IRF5801 | IPB042N10N3GE8187 | FQB9N25TM
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