All MOSFET. FQD17N08LTF Datasheet

 

FQD17N08LTF Datasheet and Replacement


   Type Designator: FQD17N08LTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 290 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: D-PAK
 

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FQD17N08LTF Datasheet (PDF)

 ..1. Size:554K  fairchild semi
 fqd17n08ltf fqd17n08ltm.pdf pdf_icon

FQD17N08LTF

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 5.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf pdf_icon

FQD17N08LTF

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

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FQD17N08LTF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQD17N08LTF

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

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Datasheet: FQD13N06LTF , FQD13N06LTM , FQD13N06TF , FQD13N06TM , FQD13N10TF , FQD13N10TM , FQD14N15TM , FQD16N15TM , AO4468 , FQD17N08LTM , FQD17P06TF , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF .

History: NCE6003XM | PH6325L | SIHFB9N65A | SUM110N08-07P | IPW50R250CP | BLS70R420-A | TPCF8003

Keywords - FQD17N08LTF MOSFET datasheet

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