FQD17N08LTM Specs and Replacement

Type Designator: FQD17N08LTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 290 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: D-PAK

FQD17N08LTM substitution

- MOSFET ⓘ Cross-Reference Search

 

FQD17N08LTM datasheet

 ..1. Size:554K  fairchild semi
 fqd17n08ltf fqd17n08ltm.pdf pdf_icon

FQD17N08LTM

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced ... See More ⇒

 5.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf pdf_icon

FQD17N08LTM

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced ... See More ⇒

 5.2. Size:1378K  onsemi
 fqd17n08l.pdf pdf_icon

FQD17N08LTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQD17N08LTM

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia... See More ⇒

SHOW MORE

Detailed specifications: FQD13N06LTM, FQD13N06TF, FQD13N06TM, FQD13N10TF, FQD13N10TM, FQD14N15TM, FQD16N15TM, FQD17N08LTF, IRFP064N, FQD17P06TF, FQD17P06TM, FQD18N20V2TF, FQD18N20V2TM, FQD19N10LTF, FQD19N10LTM, FQD19N10TF, FQD19N10TM

Keywords - FQD17N08LTM MOSFET specs

 FQD17N08LTM cross reference

 FQD17N08LTM equivalent finder

 FQD17N08LTM pdf lookup

 FQD17N08LTM substitution

 FQD17N08LTM replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs