All MOSFET. FQD19N10TM Datasheet

 

FQD19N10TM Datasheet and Replacement


   Type Designator: FQD19N10TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 15.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: D-PAK
 

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FQD19N10TM Datasheet (PDF)

 ..1. Size:678K  fairchild semi
 fqd19n10tf fqd19n10tm fqd19n10 fqu19n10.pdf pdf_icon

FQD19N10TM

January 2009QFETFQD19N10 / FQU19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especial

 6.1. Size:688K  fairchild semi
 fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf pdf_icon

FQD19N10TM

January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been

 6.2. Size:884K  cn vbsemi
 fqd19n10l.pdf pdf_icon

FQD19N10TM

FQD19N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

Datasheet: FQD17N08LTM , FQD17P06TF , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , IRF540 , FQD1N50TF , FQD1N50TM , FQD1N60CTF , FQD1N60CTM , FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM .

History: DMG3402L | AUIRL2203N | RSS120N03FU6TB | UTT6NP10G-S08-R | SIA537EDJ | IRFU15N20D | QM2N7002E3K1

Keywords - FQD19N10TM MOSFET datasheet

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