All MOSFET. FQD1N60CTM Datasheet

 

FQD1N60CTM Datasheet and Replacement


   Type Designator: FQD1N60CTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: D-PAK
 

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FQD1N60CTM Datasheet (PDF)

 ..1. Size:752K  fairchild semi
 fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf pdf_icon

FQD1N60CTM

January 2009QFETFQD1N60C / FQU1N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC)planar stripe, DMOS technology. Low Crss ( typical 3.5 pF)This advanced technology has been especiall

 6.1. Size:622K  onsemi
 fqd1n60c fqu1n60c.pdf pdf_icon

FQD1N60CTM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:541K  fairchild semi
 fqd1n60tf fqd1n60tm fqu1n60tu.pdf pdf_icon

FQD1N60CTM

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

 7.2. Size:543K  fairchild semi
 fqd1n60 fqu1n60.pdf pdf_icon

FQD1N60CTM

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

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Datasheet: FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , FQD1N50TF , FQD1N50TM , FQD1N60CTF , IRFZ44 , FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM , FQD1P50TF , FQD1P50TM , FQD20N06L , FQD20N06TF .

History: IXTA90N15T | P3606BEA | AFN4486 | UPA1913 | DMN4034SSD | AP3P7R0EJB | SVS7N60DD2TR

Keywords - FQD1N60CTM MOSFET datasheet

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