FQD1N60TF Specs and Replacement
Type Designator: FQD1N60TF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
Package: D-PAK
FQD1N60TF substitution
- MOSFET ⓘ Cross-Reference Search
FQD1N60TF datasheet
fqd1n60tf fqd1n60tm fqu1n60tu.pdf
April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology... See More ⇒
fqd1n60 fqu1n60.pdf
April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology... See More ⇒
fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf
January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especiall... See More ⇒
fqd1n60c fqu1n60c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQD19N10LTF, FQD19N10LTM, FQD19N10TF, FQD19N10TM, FQD1N50TF, FQD1N50TM, FQD1N60CTF, FQD1N60CTM, IRF640, FQD1N60TM, FQD1N80TF, FQD1N80TM, FQD1P50TF, FQD1P50TM, FQD20N06L, FQD20N06TF, FQD20N06TM
Keywords - FQD1N60TF MOSFET specs
FQD1N60TF cross reference
FQD1N60TF equivalent finder
FQD1N60TF pdf lookup
FQD1N60TF substitution
FQD1N60TF replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BL8N60-D | IRFP448PBF | TMD7N65H | IPD60R800CE
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