IRFW644A Specs and Replacement
Type Designator: IRFW644A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ -
Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO263
- MOSFET ⓘ Cross-Reference Search
IRFW644A datasheet
..2. Size:506K samsung
irfw644a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 0.214 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒
8.2. Size:512K samsung
irfw640a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Lower RDS(ON) 0.144 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒
9.7. Size:712K fairchild semi
irfw630b irfi630b.pdf
IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc... See More ⇒
9.8. Size:697K fairchild semi
irfw630b.pdf
November 2013 IRFW630B N-Channel MOSFET 200 V, 9 A, 400 m Features Description These N-Channel enhancement mode power field effect 9.0 A, 200 V, RDS(on) = 400 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 4.5 A planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state Low Gate Charge (Typ.... See More ⇒
9.9. Size:798K fairchild semi
irfw610b irfi610b.pdf
November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t... See More ⇒
9.10. Size:509K samsung
irfw630a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 0.333 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒
9.11. Size:505K samsung
irfw610a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 1.169 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara... See More ⇒
9.12. Size:513K samsung
irfw614a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 1.393 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒
9.13. Size:514K samsung
irfw624a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Low RDS(ON) 0.742 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara... See More ⇒
Detailed specifications: IRFW550A
, IRFW610A
, IRFW614A
, IRFW620A
, IRFW624A
, IRFW630A
, IRFW634A
, IRFW640A
, 2N7002
, IRFW710A
, IRFW720A
, IRFW730A
, IRFW740A
, IRFW820A
, IRFW830A
, IRFW840A
, IRFWZ14A
.
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
