All MOSFET. FQD2N100TF Datasheet

 

FQD2N100TF Datasheet and Replacement


   Type Designator: FQD2N100TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: D-PAK
 

 FQD2N100TF substitution

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FQD2N100TF Datasheet (PDF)

 ..1. Size:731K  fairchild semi
fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf pdf_icon

FQD2N100TF

January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t

 6.1. Size:309K  inchange semiconductor
fqd2n100.pdf pdf_icon

FQD2N100TF

isc N-Channel MOSFET Transistor FQD2N100FEATURESDrain Current I = 1.6A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R 9(Max)DS(on):100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:762K  fairchild semi
fqd2n60c fqu2n60c fqu2n60ctu.pdf pdf_icon

FQD2N100TF

January 2009QFETFQD2N60C/FQU2N60C 600V N-Channel MOSFETFeatures Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC)DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tail

 9.2. Size:729K  fairchild semi
fqd2n30tm.pdf pdf_icon

FQD2N100TF

May 2000TMQFETQFETQFETQFETFQD2N30 / FQU2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h

Datasheet: FQD1N80TM , FQD1P50TF , FQD1P50TM , FQD20N06L , FQD20N06TF , FQD20N06TM , FQD24N08TF , FQD24N08TM , IRFP250N , FQD2N100TM , FQD2N30TM , FQD2N40TF , FQD2N40TM , FQD2N50TF , FQD2N50TM , FQD2N60TF , FQD2N60TM .

History: TSM3N90CI | APM4220 | DMT3020LSD | CM7N60 | HAT2024R | CSFR12N60F | AP6N023H

Keywords - FQD2N100TF MOSFET datasheet

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