FQD2N60TF MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD2N60TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: D-PAK
FQD2N60TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD2N60TF Datasheet (PDF)
fqd2n60tf fqd2n60tm fqu2n60tu.pdf
April 2000TMQFETQFETQFETQFETFQD2N60 / FQU2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology
fqd2n60c fqu2n60c fqu2n60ctu.pdf
January 2009QFETFQD2N60C/FQU2N60C 600V N-Channel MOSFETFeatures Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC)DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tail
fqd2n60ctm.pdf
November 2013FQD2N60C / FQU2N60CN-Channel QFET MOSFET600 V, 1.9 A, 4.7 Features Description 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 Aproduced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 8.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 4.3 pF)
fqd2n60c fqu2n60c.pdf
TMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.5 nC)planar stripe, DMOS technology. Low Crss ( typical 4.3 pF)This advanced technology has been especially tailored
fqd2n60c.pdf
FQD2N60Cwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS
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