FQD2N60TF Specs and Replacement

Type Designator: FQD2N60TF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm

Package: D-PAK

FQD2N60TF substitution

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FQD2N60TF datasheet

 ..1. Size:560K  fairchild semi
 fqd2n60tf fqd2n60tm fqu2n60tu.pdf pdf_icon

FQD2N60TF

April 2000 TM QFET QFET QFET QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology ... See More ⇒

 7.1. Size:762K  fairchild semi
 fqd2n60c fqu2n60c fqu2n60ctu.pdf pdf_icon

FQD2N60TF

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tail... See More ⇒

 7.2. Size:557K  fairchild semi
 fqd2n60ctm.pdf pdf_icon

FQD2N60TF

November 2013 FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Features Description 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 4.3 pF) ... See More ⇒

 7.3. Size:618K  onsemi
 fqd2n60c fqu2n60c.pdf pdf_icon

FQD2N60TF

TM QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.5 nC) planar stripe, DMOS technology. Low Crss ( typical 4.3 pF) This advanced technology has been especially tailored... See More ⇒

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Detailed specifications: FQD24N08TM, FQD2N100TF, FQD2N100TM, FQD2N30TM, FQD2N40TF, FQD2N40TM, FQD2N50TF, FQD2N50TM, IRF9540, FQD2N60TM, FQD2N80TF, FQD2N80TM, FQD2N90TF, FQD2N90TM, FQD2P40TF, FQD2P40TM, FQD30N06LTF

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