FQD2P40TF Specs and Replacement

Type Designator: FQD2P40TF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: D-PAK

FQD2P40TF substitution

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FQD2P40TF datasheet

 ..1. Size:640K  fairchild semi
 fqd2p40tf fqd2p40tm fqd2p40 fqu2p40.pdf pdf_icon

FQD2P40TF

October 2008 QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.56A, -400V, RDS(on) = 6.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology is especially t... See More ⇒

 7.1. Size:864K  onsemi
 fqd2p40.pdf pdf_icon

FQD2P40TF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQD2N50TF, FQD2N50TM, FQD2N60TF, FQD2N60TM, FQD2N80TF, FQD2N80TM, FQD2N90TF, FQD2N90TM, IRF4905, FQD2P40TM, FQD30N06LTF, FQD30N06LTM, FQD30N06TF, FQD30N06TM, FQD3N30TF, FQD3N30TM, FQD3N40TM

Keywords - FQD2P40TF MOSFET specs

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