All MOSFET. IRFW720A Datasheet

 

IRFW720A Datasheet and Replacement


   Type Designator: IRFW720A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO263
 

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IRFW720A Datasheet (PDF)

 ..1. Size:116K  1
 irfi720a irfw720a.pdf pdf_icon

IRFW720A

 ..2. Size:506K  samsung
 irfw720a.pdf pdf_icon

IRFW720A

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 1.408 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 7.1. Size:666K  fairchild semi
 irfw720b irfi720b.pdf pdf_icon

IRFW720A

November 2001IRFW720B / IRFI720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 9.1. Size:117K  1
 irfi730a irfw730a.pdf pdf_icon

IRFW720A

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Datasheet: IRFW614A , IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRF4905 , IRFW730A , IRFW740A , IRFW820A , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A .

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