FQD3P50TM Datasheet and Replacement. Cross Reference Search

FQD3P50TM Datasheet (PDF)

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January 2009QFETFQD3P50 / FQU3P50500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been espe

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November 2010FQD3P50TM_F085500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been especially tai

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FQD3P50 P-Channel QFET MOSFET- 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V,DescriptionID = - 1.05 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 9.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

9.1. Size:547K fairchild semi
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April 2000TMQFETQFETQFETQFETFQD3P20 / FQU3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo

Datasheet: FQD3N30TM , FQD3N40TM , FQD3N50CTF , FQD3N50CTM , FQD3N60TM , FQD3P20TF , FQD3P20TM , FQD3P50TF , IRLZ44N , FQD4N20LTM , FQD4N20TF , FQD4N25TF , FQD4N25TM , FQD4N50TF , FQD4N50TM , FQD4P25TF , FQD4P25TM .