FQD4P25TF Specs and Replacement

Type Designator: FQD4P25TF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: D-PAK

FQD4P25TF substitution

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FQD4P25TF datasheet

 6.1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TF

November 2013 FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC) technology has been especi... See More ⇒

 6.2. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TF

FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, Description ID = -1.55 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor s Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET t... See More ⇒

 7.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P25TF

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn... See More ⇒

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TF

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn... See More ⇒

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Detailed specifications: FQD3P50TF, FQD3P50TM, FQD4N20LTM, FQD4N20TF, FQD4N25TF, FQD4N25TM, FQD4N50TF, FQD4N50TM, TK10A60D, FQD4P25TM, FQD4P40, FQD4P40TF, FQD4P40TM, FQD5N15TF, FQD5N15TM, FQD5N20LTF, FQD5N20LTM

Keywords - FQD4P25TF MOSFET specs

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