All MOSFET. FQD4P25TF Datasheet

 

FQD4P25TF Datasheet and Replacement


   Type Designator: FQD4P25TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: D-PAK
 

 FQD4P25TF substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQD4P25TF Datasheet (PDF)

 6.1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TF

November 2013FQD4P25TM_WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = -1.55 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC)technology has been especi

 6.2. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TF

FQD4P25TM-WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,DescriptionID = -1.55 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC)produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF)proprietary planar stripe and DMOS technology. This advanced MOSFET t

 7.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P25TF

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TF

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

SHOW MORE

Datasheet: FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF , FQD4N25TM , FQD4N50TF , FQD4N50TM , IRFZ24N , FQD4P25TM , FQD4P40 , FQD4P40TF , FQD4P40TM , FQD5N15TF , FQD5N15TM , FQD5N20LTF , FQD5N20LTM .

History: TPCP8007-H | AON6242 | SVGP104R5NAT | AON6266 | KRLML6401 | ELM5B801QA | SI4447ADY

Keywords - FQD4P25TF MOSFET datasheet

 FQD4P25TF cross reference
 FQD4P25TF equivalent finder
 FQD4P25TF lookup
 FQD4P25TF substitution
 FQD4P25TF replacement

 

 
Back to Top

 


 
.