All MOSFET. FQD5N30TM Datasheet

 

FQD5N30TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD5N30TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9.8 nC

Rise Time (tr): 55 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: D-PAK

FQD5N30TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD5N30TM Datasheet (PDF)

1.1. fqd5n30tf fqd5n30tm.pdf Size:752K _fairchild_semi

FQD5N30TM
FQD5N30TM

May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology h

3.1. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

FQD5N30TM
FQD5N30TM

May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology h

 5.1. fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N30TM
FQD5N30TM

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

5.2. fqd5n15tf fqd5n15tm.pdf Size:808K _fairchild_semi

FQD5N30TM
FQD5N30TM

October 2008 QFET® 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.3A, 150V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especial

 5.3. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi

FQD5N30TM
FQD5N30TM

October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especia

5.4. fqd5n50.pdf Size:548K _fairchild_semi

FQD5N30TM
FQD5N30TM

TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche an

 5.5. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N30TM
FQD5N30TM

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

5.6. fqd5n40tf fqd5n40tm fqu5n40tu.pdf Size:730K _fairchild_semi

FQD5N30TM
FQD5N30TM

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology

5.7. fqd5n20tf.pdf Size:690K _fairchild_semi

FQD5N30TM
FQD5N30TM

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

5.8. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi

FQD5N30TM
FQD5N30TM

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

5.9. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

FQD5N30TM
FQD5N30TM

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology

5.10. fqd5n15.pdf Size:840K _fairchild_semi

FQD5N30TM
FQD5N30TM

November 2013 FQD5N15 N-Channel QFET® MOSFET 150 V, 4.3 A, 800 mΩ Description Features This N-Channel enhancement mode power MOSFET is • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 2.15 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 5.4 nC) MOSFET technology has been especially tai

5.11. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi

FQD5N30TM
FQD5N30TM

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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