FQD5P20TF Datasheet. Specs and Replacement
Type Designator: FQD5P20TF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: D-PAK
FQD5P20TF substitution
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FQD5P20TF datasheet
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October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been espec... See More ⇒
Detailed specifications: FQD5N50, FQD5N50CTF, FQD5N50CTM, FQD5N50TF, FQD5N60CTF, FQD5N60CTM, FQD5P10TF, FQD5P10TM, AO3400A, FQD5P20TM, FQD630TF, FQD630TM, FQD6N25TF, FQD6N25TM, FQD6N40CTF, FQD6N40CTM, FQD6N40TF
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