IRF2804S-7PPBF Specs and Replacement
Type Designator: IRF2804S-7PPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 1750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TO-263CA-7
IRF2804S-7PPBF substitution
- MOSFET ⓘ Cross-Reference Search
IRF2804S-7PPBF datasheet
irf2804s-7ppbf.pdf
PD - 97057A IRF2804S-7PPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature l Fast Switching VDSS = 40V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G RDS(on) = 1.6m Description S This HEXFET Power MOSFET utilizes the latest ID = 160A S (Pin 2, 3 ,5,6,7) processing techniques to achieve extr... See More ⇒
auirf2804s-7p.pdf
AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc... See More ⇒
irf2804pbf irf2804spbf irf2804lpbf.pdf
PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e... See More ⇒
irf2804lpbf irf2804pbf irf2804spbf.pdf
PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e... See More ⇒
Detailed specifications: FQD6N40TF, FQD6N40TM, IRF2204LPBF, IRF2204PBF, IRF2204SPBF, IRF22N60C, IRF2804LPBF, IRF2804PBF, AOD4184A, IRF2804SPBF, IRF2805LPBF, IRF2805PBF, IRF2805SPBF, IRF2807PBF, IRF2807SPBF, IRF2807LPBF, IRF2807ZLPBF
Keywords - IRF2804S-7PPBF MOSFET specs
IRF2804S-7PPBF cross reference
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IRF2804S-7PPBF substitution
IRF2804S-7PPBF replacement
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History: FQP2N30
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