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2SJ203 Spec and Replacement


   Type Designator: 2SJ203
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 80 °C
   tr ⓘ - Rise Time: 420 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SC59

 2SJ203 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ203 Specs

 ..1. Size:241K  nec
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2SJ203

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 ..2. Size:1300K  kexin
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2SJ203

SMD Type MOSFET P-Channel MOSFET 2SJ203 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-16V 1 2 ID =-200m A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 23 (VGS =-2.5V) RDS(ON) 10 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD... See More ⇒

 0.1. Size:1308K  kexin
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2SJ203

SMD Type MOSFET P-Channel MOSFET 2SJ203 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-16V ID =-200m A 1 2 RDS(ON) 23 (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 10 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta... See More ⇒

 9.1. Size:245K  toshiba
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2SJ203

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒

Detailed specifications: 2SJ180 , 2SJ184 , 2SJ185 , 2SJ196 , 2SJ197 , 2SJ198 , 2SJ199 , 2SJ202 , IRF4905 , 2SJ204 , 2SJ205 , 2SJ206 , 2SJ207 , 2SJ208 , 2SJ209 , 2SJ210 , 2SJ211 .

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Keywords - 2SJ203 MOSFET specs

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