IRF2807SPBF MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF2807SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-263

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IRF2807SPBF Datasheet (PDF)

..1. Size:272K international rectifier
irf2807lpbf irf2807spbf.pdf pdf_icon

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

..2. Size:272K infineon
irf2807spbf irf2807lpbf.pdf pdf_icon

6.1. Size:124K international rectifier
irf2807s.pdf pdf_icon

PD - 94170IRF2807SIRF2807LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 75V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13m Fast SwitchingG Fully Avalanche RatedID = 82A DescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low o

6.2. Size:258K inchange semiconductor
irf2807s.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF2807SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

7.1. Size:173K international rectifier
irf2807z.pdf pdf_icon

PD - 94659IRF2807ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 9.4m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

7.2. Size:233K international rectifier
irf2807pbf.pdf pdf_icon

PD - 94970AIRF2807PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 75Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 13ml Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 82ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

7.3. Size:399K international rectifier
irf2807zlpbf irf2807zpbf irf2807zspbf.pdf pdf_icon

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

7.4. Size:207K international rectifier
irf2807.pdf pdf_icon

PD - 91517IRF2807HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13mG Fast Switching Fully Avalanche RatedID = 82A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistanc

7.5. Size:399K infineon
irf2807zpbf irf2807zspbf irf2807zlpbf.pdf pdf_icon

7.6. Size:196K infineon
auirf2807.pdf pdf_icon

PD - 96384AAUTOMOTIVE GRADEAUIRF2807HEXFET Power MOSFETFeaturesV(BR)DSS75Vl Advanced Planar Technology Dl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.13ml 175C Operating Temperaturel Fast SwitchingGID(Silicon Limited) 82Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS Compliantl Au

7.7. Size:256K inchange semiconductor
irf2807zl.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF2807ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

7.8. Size:258K inchange semiconductor
irf2807zs.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF2807ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

7.9. Size:246K inchange semiconductor
irf2807z.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807ZFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSO

7.10. Size:245K inchange semiconductor
irf2807.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF2807IIRF2807FEATURESStatic drain-source on-resistance:RDS(on) 13mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

7.11. Size:256K inchange semiconductor
irf2807l.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF2807LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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All MOSFET. IRF2807SPBF Datasheet

IRF2807SPBF MOSFET. Datasheet pdf. Equivalent

IRF2807SPBF Datasheet (PDF)

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