IRF2903ZLPBF Specs and Replacement

Type Designator: IRF2903ZLPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO-262

IRF2903ZLPBF substitution

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IRF2903ZLPBF datasheet

 ..1. Size:346K  international rectifier
irf2903zlpbf irf2903zspbf.pdf pdf_icon

IRF2903ZLPBF

PD - 96098A IRF2903ZSPbF IRF2903ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l 175 C Operating Temperature l Fast Switching RDS(on) = 2.4m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes the latest D D processing techniques to achieve extremel... See More ⇒

 5.1. Size:705K  infineon
auirf2903zs auirf2903zl.pdf pdf_icon

IRF2903ZLPBF

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175 C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie... See More ⇒

 6.1. Size:287K  international rectifier
irf2903zpbf.pdf pdf_icon

IRF2903ZLPBF

PD -96097A IRF2903ZPbF Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l 175 C Operating Temperature l Fast Switching RDS(on) = 2.4m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 75A S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance... See More ⇒

 6.2. Size:419K  infineon
auirf2903z.pdf pdf_icon

IRF2903ZLPBF

AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175 C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu... See More ⇒

Detailed specifications: IRF2805PBF, IRF2805SPBF, IRF2807PBF, IRF2807SPBF, IRF2807LPBF, IRF2807ZLPBF, IRF2807ZPBF, IRF2807ZSPBF, IRF540N, IRF2903ZPBF, IRF2903ZSPBF, IRF2907ZLPBF, IRF2907ZPBF, IRF2907ZS-7PPBF, IRF2907ZSPBF, IRF3610SPBF, IRF3703PBF

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