IRF2907ZLPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF2907ZLPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 180 nC
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 970 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-262
IRF2907ZLPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF2907ZLPBF Datasheet (PDF)
irf2907zlpbf irf2907zpbf irf2907zspbf.pdf
PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie
irf2907zpbf irf2907zspbf irf2907zlpbf.pdf
PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie
auirf2907zs-7p.pdf
PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot
irf2907zs-7ppbf.pdf
PD - 97031DIRF2907ZS-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.8mGDescriptionSID = 160AThis HEXFET Power MOSFET utilizes the latestS (Pin 2, 3, 5, 6, 7)processing techniques and advanced packaging G (
auirf2907z.pdf
PD - 97545AUTOMOTIVE GRADEAUIRF2907ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.4.5m Fast SwitchingG Repetitive Avalanche Allowed up to ID (Silicon Limited)170ATjmaxSID (Package Limited)75A Lead-Free, RoHS Compliant Automotive Qualified *
auirf2907zs7ptl.pdf
PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot
irf2907zs.pdf
Isc N-Channel MOSFET Transistor IRF2907ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
irf2907z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2907Z IIRF2907ZFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: STT5PF20V
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