IRF3708L MOSFET Datasheet: N-Ch, 30V, 62A. Full specification with pinout and replacement list

IRF3708L Specs and Replacement

Type Designator: IRF3708L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 707 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-262

IRF3708L substitution

- MOSFET ⓘ Cross-Reference Search

IRF3708L datasheet

..1. Size:277K international rectifier
irf3708pbf irf3708spbf irf3708lpbf.pdf pdf_icon

PD - 95363 IRF3708PbF SMPS MOSFET IRF3708SPbF IRF3708LPbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom VDSS RDS(on) max ID and Industrial Use 30V 12m 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Ful... See More ⇒

..2. Size:138K international rectifier
irf3708s irf3708l.pdf pdf_icon

PD - 93938B IRF3708 SMPS MOSFET IRF3708S IRF3708L Applications HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom VDSS RDS(on) max ID and Industrial Use 30V 12m 62A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch... See More ⇒

..3. Size:142K international rectifier
irf3708l.pdf pdf_icon