IRF3709SPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF3709SPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 171
nS
Cossⓘ -
Output Capacitance: 1064
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO-263
IRF3709SPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF3709SPBF
Datasheet (PDF)
..1. Size:231K international rectifier
irf3709lpbf irf3709pbf irf3709spbf.pdf
PD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive
..2. Size:231K infineon
irf3709pbf irf3709spbf irf3709lpbf.pdf
PD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive
6.1. Size:121K international rectifier
irf3709 irf3709s irf3709l.pdf
PD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-
6.2. Size:243K inchange semiconductor
irf3709s.pdf
isc N-Channel MOSFET Transistor IRF3709SDESCRIPTIONDrain Current :I = 90A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL A
7.1. Size:337K international rectifier
irf3709z irf3709zl irf3709zs.pdf
PD - 95835IRF3709ZIRF3709ZSIRF3709ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum RatingsParameter M
7.2. Size:312K international rectifier
irf3709zcs.pdf
PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S
7.3. Size:377K international rectifier
irf3709zlpbf irf3709zpbf irf3709zspbf.pdf
PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum
7.4. Size:121K international rectifier
irf3709.pdf
PD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-
7.5. Size:312K international rectifier
irf3709zcl.pdf
PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S
7.6. Size:361K international rectifier
irf3709zclpbf.pdf
PD - 95529IRF3709ZCSPbFIRF3709ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. Uni
7.7. Size:377K infineon
irf3709zpbf irf3709zspbf irf3709zlpbf.pdf
PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum
7.8. Size:271K inchange semiconductor
irf3709zcs.pdf
isc N-Channel MOSFET Transistor IRF3709ZCSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM
7.9. Size:248K inchange semiconductor
irf3709zs.pdf
isc N-Channel MOSFET Transistor IRF3709ZSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM
7.10. Size:247K inchange semiconductor
irf3709z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3709Z IIRF3709ZFEATURESLow drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
7.11. Size:246K inchange semiconductor
irf3709.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3709 IIRF3709FEATURESLow drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RAT
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