IRF3709ZSPBF Specs and Replacement

Type Designator: IRF3709ZSPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 87 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO-263

IRF3709ZSPBF substitution

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IRF3709ZSPBF datasheet

 ..1. Size:377K  international rectifier
irf3709zlpbf irf3709zpbf irf3709zspbf.pdf pdf_icon

IRF3709ZSPBF

PD -95465 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum... See More ⇒

 ..2. Size:377K  international rectifier
irf3709zpbf irf3709zspbf irf3709zlpbf.pdf pdf_icon

IRF3709ZSPBF

PD -95465 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum... See More ⇒

 5.1. Size:337K  international rectifier
irf3709z irf3709zl irf3709zs.pdf pdf_icon

IRF3709ZSPBF

PD - 95835 IRF3709Z IRF3709ZS IRF3709ZL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum Ratings Parameter M... See More ⇒

 5.2. Size:248K  inchange semiconductor
irf3709zs.pdf pdf_icon

IRF3709ZSPBF

isc N-Channel MOSFET Transistor IRF3709ZS DESCRIPTION Static drain-source on-resistance RDS(on) 6.3m @V = 10V GS Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: IRF3708SPBF, IRF3709LPBF, IRF3709PBF, IRF3709SPBF, IRF3709ZCL, IRF3709ZCLPBF, IRF3709ZLPBF, IRF3709ZPBF, 13N50, IRF3710A, IRF3710LPBF, IRF3710PBF, IRF3710SPBF, IRF3710ZLPBF, IRF3710ZPBF, IRF3710ZSPBF, IRF3711

Keywords - IRF3709ZSPBF MOSFET specs

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