IRF3710LPBF Datasheet and Replacement

PD - 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to

PD - 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely

Isc N-Channel MOSFET Transistor IRF3710LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

PD - 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

PD - 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

PD - 91309AIRF3710HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 23mG Fast Switching Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanc

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

SEMICONDUCTORIRF3710TECHNICAL DATAN-Channel Power MOSFET (100V/59A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drain

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Isc N-Channel MOSFET Transistor IRF3710ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF3710FEATURESDrain Current I =57A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high effciency switch mode power supplies,Power fa

Isc N-Channel MOSFET Transistor IRF3710SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10