All MOSFET. FQD7P06TF Datasheet

 

FQD7P06TF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD7P06TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.451 Ohm
   Package: D-PAK

 FQD7P06TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD7P06TF Datasheet (PDF)

Datasheet: FQD7N10LTM , FQD7N10TM , FQD7N20LTF , FQD7N20LTM , FQD7N20TF , FQD7N20TM , FQD7N30TF , FQD7N30TM , 5N65 , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , FQD8P10TM , FQD9N25TF , FQD9N25TM .

 

 
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