FQD7P20TF Specs and Replacement
Type Designator: FQD7P20TF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
Package: D-PAK
FQD7P20TF substitution
- MOSFET ⓘ Cross-Reference Search
FQD7P20TF datasheet
fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf
April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo... See More ⇒
fqd7p20.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqd7p20.pdf
isc P-Channel MOSFET Transistor FQD7P20 FEATURES Drain Current I = -5.7A@ T =25 D C Drain Source Voltage- V = -200V(Min) DSS Static Drain-Source On-Resistance R = 0.69 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf
May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially... See More ⇒
Detailed specifications: FQD7N20LTF, FQD7N20LTM, FQD7N20TF, FQD7N20TM, FQD7N30TF, FQD7N30TM, FQD7P06TF, FQD7P06TM, AON7403, FQD7P20TM, FQD8N25TF, FQD8P10TF, FQD8P10TM, FQD9N25TF, FQD9N25TM, FQE10N20CTU, FQH140N10
Keywords - FQD7P20TF MOSFET specs
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