FQI12N50TU PDF and Equivalents Search

 

FQI12N50TU PDF Specs and Replacement


   Type Designator: FQI12N50TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: I2-PAK
 

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FQI12N50TU PDF Specs

 ..1. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf pdf_icon

FQI12N50TU

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 39 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored... See More ⇒

 8.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf pdf_icon

FQI12N50TU

April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo... See More ⇒

 8.2. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf pdf_icon

FQI12N50TU

September 2007 QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially ... See More ⇒

 9.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQI12N50TU

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe... See More ⇒

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Detailed specifications: FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , IRF540 , FQI12N60CTU , FQI12N60TU , FQI13N06LTU , FQI13N06TU , FQI13N50CTU , FQI15P12TU , FQI16N25CTU , FQI17N08LTU .

Keywords - FQI12N50TU MOSFET specs

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