FQI12N60TU MOSFET Datasheet: N-Ch, 600V, 10.5A. Full specification with pinout and replacement list

FQI12N60TU Specs and Replacement

   Type Designator: FQI12N60TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: I2-PAK

FQI12N60TU substitution

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FQI12N60TU datasheet

..1. Size:540K fairchild semi
fqb12n60tm am002 fqi12n60tu.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo... See More ⇒

6.1. Size:821K fairchild semi
fqb12n60ctm fqi12n60ctu.pdf pdf_icon

September 2007 QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially ... See More ⇒

8.1. Size:616K fairchild semi
fqb12n50tm am002 fqi12n50tu.pdf pdf_icon

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 39 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored... See More ⇒

9.1. Size:1014K fairchild semi
fqb12p20 fqi12p20.pdf pdf_icon

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe... See More ⇒

Detailed specifications: FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU , IRFP460 , FQI13N06LTU , FQI13N06TU , FQI13N50CTU , FQI15P12TU , FQI16N25CTU , FQI17N08LTU , FQI17N08TU , FQI17P06TU .