All MOSFET. FQI13N06TU Datasheet

 

FQI13N06TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI13N06TU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 5.8 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: I2-PAK

FQI13N06TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI13N06TU Datasheet (PDF)

1.1. fqi13n06tu.pdf Size:673K _fairchild_semi

FQI13N06TU
FQI13N06TU

May 2001 TM QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially

2.1. fqi13n06ltu.pdf Size:668K _fairchild_semi

FQI13N06TU
FQI13N06TU

May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

 4.1. fqb13n50c fqi13n50c.pdf Size:967K _fairchild_semi

FQI13N06TU
FQI13N06TU

October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to

4.2. fqi13n50ctu.pdf Size:967K _fairchild_semi

FQI13N06TU
FQI13N06TU

October 2008 QFET® FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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