All MOSFET. IRFY240 Datasheet

 

IRFY240 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFY240
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60(max) nC
   trⓘ - Rise Time: 152(max) nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO257AA

 IRFY240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFY240 Datasheet (PDF)

 ..1. Size:161K  international rectifier
 irfy240.pdf

IRFY240 IRFY240

PD - 94187IRFY240,IRFY240MPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY240 0.18 16A GlassIRFY240M 0.18 16A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-state

 0.1. Size:161K  international rectifier
 irfy240c.pdf

IRFY240 IRFY240

PD - 91289CIRFY240C,IRFY240CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY240 0.18 16A GlassIRFY240M 0.18 16A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-st

 0.2. Size:214K  international rectifier
 irfy240cm.pdf

IRFY240 IRFY240

PD-91289EIRFY240C,IRFY240CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 16A Ceramic IRFY240CM 0.18 16A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very lo

 0.3. Size:752K  semelab
 irfy240m.pdf

IRFY240 IRFY240

N-CHANNEL POWER MOSFET IRFY240 / IRFY240M Low RDS(on) MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25C

Datasheet: IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFY130 , IRFY130C , IRFY140 , IRFY140C , 13N50 , IRFY240C , IRFY340 , IRFY340C , IRFY430 , IRFY430C , IRFY440 , IRFY440C , IRFY9120 .

 

 
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