All MOSFET. FQI3N25TU Datasheet

 

FQI3N25TU Datasheet and Replacement


   Type Designator: FQI3N25TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: I2-PAK
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FQI3N25TU Datasheet (PDF)

 ..1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQI3N25TU

November 2000TMQFETQFETQFETQFETFQB3N25 / FQI3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technolo

 9.1. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQI3N25TU

April 2000TMQFETQFETQFETQFETFQB3N40 / FQI3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog

 9.2. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQI3N25TU

September 2000TMQFETQFETQFETQFETFQB3N90 / FQI3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced techn

 9.3. Size:718K  fairchild semi
 fqb3n30tm fqi3n30tu.pdf pdf_icon

FQI3N25TU

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

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History: SCDP120R040NP4B | STM6966 | CS5N65U

Keywords - FQI3N25TU MOSFET datasheet

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