FQI50N06TU Specs and Replacement

Type Designator: FQI50N06TU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: I2-PAK

FQI50N06TU substitution

- MOSFET ⓘ Cross-Reference Search

 

FQI50N06TU datasheet

 ..1. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf pdf_icon

FQI50N06TU

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

 6.1. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf pdf_icon

FQI50N06TU

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

 6.2. Size:1022K  fairchild semi
 fqb50n06ltm fqi50n06ltu.pdf pdf_icon

FQI50N06TU

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee... See More ⇒

 6.3. Size:1052K  fairchild semi
 fqb50n06l fqi50n06l.pdf pdf_icon

FQI50N06TU

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee... See More ⇒

SHOW MORE

Detailed specifications: FQI3P20TU, FQI3P50TU, FQI47P06TU, FQI4N20TU, FQI4N25TU, FQI4N90TU, FQI4P40TU, FQI50N06LTU, 4435, FQI5N15TU, FQI5N20LTU, FQI5N20TU, FQI5N30TU, FQI5N40TU, FQI5N50CTU, FQI5N60CTU, FQI5N80TU

Keywords - FQI50N06TU MOSFET specs

 FQI50N06TU cross reference

 FQI50N06TU equivalent finder

 FQI50N06TU pdf lookup

 FQI50N06TU substitution

 FQI50N06TU replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.