All MOSFET. FQI5N80TU Datasheet

 

FQI5N80TU Datasheet and Replacement


   Type Designator: FQI5N80TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: I2-PAK
 

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FQI5N80TU Datasheet (PDF)

 ..1. Size:670K  fairchild semi
 fqi5n80tu.pdf pdf_icon

FQI5N80TU

September 2000TMQFETFQB5N80 / FQI5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

 9.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQI5N80TU

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored

 9.2. Size:553K  fairchild semi
 fqb5n60 fqi5n60.pdf pdf_icon

FQI5N80TU

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h

 9.3. Size:945K  fairchild semi
 fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf pdf_icon

FQI5N80TU

October 2008QFETFQB5N50C/FQI5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tai

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Datasheet: FQI50N06TU , FQI5N15TU , FQI5N20LTU , FQI5N20TU , FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU , TK10A60D , FQI5P10TU , FQI6N15TU , FQI6N40CTU , FQI6N50TU , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU .

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