FQI6N60CTU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI6N60CTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: I2-PAK
FQI6N60CTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI6N60CTU Datasheet (PDF)
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