FQI9N15TU Specs and Replacement

Type Designator: FQI9N15TU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: I2-PAK

FQI9N15TU substitution

- MOSFET ⓘ Cross-Reference Search

 

FQI9N15TU datasheet

 ..1. Size:778K  fairchild semi
 fqb9n15tm fqi9n15tu.pdf pdf_icon

FQI9N15TU

May 2000 TM QFET QFET QFET QFET FQB9N15 / FQI9N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has... See More ⇒

 9.1. Size:610K  fairchild semi
 fqi9n08ltu.pdf pdf_icon

FQI9N15TU

June 2000 TM QFET QFET QFET QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced techno... See More ⇒

 9.2. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf pdf_icon

FQI9N15TU

QFET FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailore... See More ⇒

 9.3. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQI9N15TU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to ... See More ⇒

SHOW MORE

Detailed specifications: FQI7N10LTU, FQI7N10TU, FQI7N60TU, FQI7N80TU, FQI8N60CTU, FQI8P10TU, FQI9N08LTU, FQI9N08TU, IRF1407, FQI9N25CTU, FQI9N50CTU, FQI9N50TU, FQL50N40, FQN1N50CBU, FQN1N50CTA, FQN1N60CBU, FQN1N60CTA

Keywords - FQI9N15TU MOSFET specs

 FQI9N15TU cross reference

 FQI9N15TU equivalent finder

 FQI9N15TU pdf lookup

 FQI9N15TU substitution

 FQI9N15TU replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs