FQI9N25CTU Specs and Replacement

Type Designator: FQI9N25CTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: I2-PAK

FQI9N25CTU substitution

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FQI9N25CTU datasheet

 ..1. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf pdf_icon

FQI9N25CTU

QFET FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailore... See More ⇒

 9.1. Size:610K  fairchild semi
 fqi9n08ltu.pdf pdf_icon

FQI9N25CTU

June 2000 TM QFET QFET QFET QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced techno... See More ⇒

 9.2. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQI9N25CTU

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.3. Size:705K  fairchild semi
 fqb9n50tm fqi9n50tu.pdf pdf_icon

FQI9N25CTU

April 2000 TM QFET QFET QFET QFET FQB9N50 / FQI9N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology... See More ⇒

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Detailed specifications: FQI7N10TU, FQI7N60TU, FQI7N80TU, FQI8N60CTU, FQI8P10TU, FQI9N08LTU, FQI9N08TU, FQI9N15TU, 2SK3568, FQI9N50CTU, FQI9N50TU, FQL50N40, FQN1N50CBU, FQN1N50CTA, FQN1N60CBU, FQN1N60CTA, FQNL1N50BBU

Keywords - FQI9N25CTU MOSFET specs

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