All MOSFET. FQNL2N50BTA Datasheet

 

FQNL2N50BTA MOSFET. Datasheet pdf. Equivalent

Type Designator: FQNL2N50BTA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 0.35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 5.3 Ohm

Package: TO-92L

FQNL2N50BTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQNL2N50BTA Datasheet (PDF)

1.1. fqnl2n50bbu fqnl2n50bta.pdf Size:596K _fairchild_semi

FQNL2N50BTA
FQNL2N50BTA

March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been especially tailo

1.2. fqnl2n50b.pdf Size:598K _fairchild_semi

FQNL2N50BTA
FQNL2N50BTA

March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been especially tailored to Fas

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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