FQNL2N50BTA MOSFET Datasheet: N-Ch, 500V, 0.35A. Full specification with pinout and replacement list

FQNL2N50BTA Specs and Replacement

Type Designator: FQNL2N50BTA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 30 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm

Package: TO-92L

FQNL2N50BTA substitution

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FQNL2N50BTA datasheet

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March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been especially tailo... See More ⇒

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQL50N40 , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU , IRFZ24N , FQP10N20 , FQP10N20CTSTU , FQP10N60 , FQP10N60CF , FQP11N40 , FQP11N50CF , FQP12N60 , FQP13N06 .