All MOSFET. FQP19N10L Datasheet

 

FQP19N10L Datasheet and Replacement


   Type Designator: FQP19N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 410 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-220
 

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FQP19N10L Datasheet (PDF)

 ..1. Size:626K  fairchild semi
fqp19n10l.pdf pdf_icon

FQP19N10L

August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has

 6.1. Size:591K  fairchild semi
fqp19n10.pdf pdf_icon

FQP19N10L

August 2000TMQFETQFETQFETQFETFQP19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been es

 8.1. Size:1168K  fairchild semi
fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQP19N10L

QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailo

 8.2. Size:722K  fairchild semi
fqp19n20l.pdf pdf_icon

FQP19N10L

May 2000TMQFETQFETQFETQFET 200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has b

Datasheet: FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , FQP17N08L , FQP18N20V2 , FQP18N50V2 , FQP19N10 , 8N60 , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 , FQP20N06TSTU , FQP22P10 , FQP27P06SW82127 .

History: NCE65NF190V | SI1031R | AP72T03GP-HF | DAMH300N150 | AFP1433 | SVF12N65CK | SI1865DDL

Keywords - FQP19N10L MOSFET datasheet

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