FQP19N20CTSTU Specs and Replacement
Type Designator: FQP19N20CTSTU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 195 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-220
FQP19N20CTSTU substitution
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FQP19N20CTSTU datasheet
fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf
QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailo... See More ⇒
fqp19n20c fqpf19n20c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqp19n20l.pdf
May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has b... See More ⇒
fqp19n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee... See More ⇒
Detailed specifications: FQP13N06, FQP16N15, FQP17N08, FQP17N08L, FQP18N20V2, FQP18N50V2, FQP19N10, FQP19N10L, AON7403, FQP19N20L, FQP1N50, FQP1N60, FQP1P50, FQP20N06TSTU, FQP22P10, FQP27P06SW82127, FQP2N30
Keywords - FQP19N20CTSTU MOSFET specs
FQP19N20CTSTU cross reference
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FQP19N20CTSTU substitution
FQP19N20CTSTU replacement
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