FQP3N80 PDF and Equivalents Search

 ..1. Size:654K  fairchild semi
 fqp3n80.pdf

September 2000 TM QFET FQP3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially tailo... See More ⇒

 0.1. Size:810K  fairchild semi
 fqp3n80c fqpf3n80c.pdf

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒

 0.2. Size:883K  onsemi
 fqp3n80c fqpf3n80c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:567K  fairchild semi
 fqp3n60.pdf

April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been es... See More ⇒

 9.2. Size:707K  fairchild semi
 fqp3n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been... See More ⇒

 9.3. Size:708K  fairchild semi
 fqp3n30.pdf

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been ... See More ⇒

 9.4. Size:612K  fairchild semi
 fqp3n25.pdf

November 2000 TM QFET QFET QFET QFET FQP3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technology has bee... See More ⇒

 9.5. Size:1269K  fairchild semi
 fqp3n50c fqpf3n50c.pdf

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to... See More ⇒

 9.6. Size:1267K  fairchild semi
 fqp3n50c fqpf3n50c.pdf

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to... See More ⇒

 9.7. Size:689K  fairchild semi
 fqp3n90.pdf

September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has ... See More ⇒

 9.8. Size:741K  fairchild semi
 fqp3n60c.pdf

... See More ⇒

 9.9. Size:1241K  onsemi
 fqp3n60c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒